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BAR64V-05W-V
Vishay Semiconductors
RF PIN Diodes - Dual, Common Cathode in SOT323
Description
Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (RF) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for these PIN Diodes are switches and attenuators in wireless, mobile and TV-systems.
2 1
3
1
2
18380
3
Features
* * * * * * * High voltage current controlled RF resistor Small diode capacitance e3 Low series inductance Low forward resistance Improved performance due to two seperated dice Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data
Case: SOT323 plastic case Weight: approx. 6.0 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box
Applications
* * * * For frequencies up to 3 GHz RF-signal tuning Signal attenuator and switches Mobile, wireless and TV-Applications
Parts Table
Part BAR64V-05W-V Ordering code BAR64V-05W-V-GS18 or BAR64V-05W-V-GS08 Marking DW5 Remarks Tape and reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Symbol VR IF Tj Tstg Value 100 100 150 - 55 to + 150 Unit V mA C C
Document Number 81836 Rev. 1.1, 25-Feb-08
For technical support, please contact: Diodes-SSP@vishay.com
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BAR64V-05W-V
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter Reverse voltage Reverse current Forward voltage Diode capacitance Test condition IR = 10 A VR = 50 V IF = 50 mA f = 1 MHz, VR = 0 f = 1 MHz, VR = 1 V f = 1 MHz, VR = 20 V f = 100 MHz, IF = 1 mA Forward resistance Charge carrier life time Series inductance f = 100 MHz, IF = 10 mA f = 100 MHz, IF = 100 mA IF = 10 mA, IR = 6 mA, iR = 3 mA Symbol VR IR VF CD CD CD rf rf rf trr LS 0.5 0.37 0.23 10 2.0 0.8 1.8 1 0.5 0.35 20 3.8 1.35 Min. 100 50 1.1 Typ. Max. Unit V nA V pF pF pF s nH
Typical Characteristics
Tamb = 25 C, unless otherwise specified
100.00 100.0
rf - Forward Ressistance ()
I F - Forward Current (mA)
100
f = 100 MHz 10.0
10.00
1.00
1.0
0.10
0.1 0.1
18342
0.01 1 10 0.5
18326
0.6
0.7
0.8
0.9
1.0
IF - Forward Current (mA)
VF - Forward Voltage (V)
Figure 1. Forward Resistance vs. Forward Current
Figure 3. Forward Current vs. Forward Voltage
0.50 0.45
12
f = 1 MHz
10
CD - Diode Capacitance (pF)
I F = 10 mA I R = 6 mA i rr = 3 mA
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
I F - Forward Current (mA)
0 4 8 12
16 20 24 28
18338
8 6 4 2 0 -2 -4 -6 -8 - 500 500
1500
2500
3500
18334
VR - Reverse Voltage (V)
trr - Reverse Recovery Time (ns)
Figure 2. Diode Capacitance vs. Reverse Voltage
Figure 4. Typical Charge Recovery Curve
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For technical support, please contact: Diodes-SSP@vishay.com
Document Number 81836 Rev. 1.1, 25-Feb-08
BAR64V-05W-V
Vishay Semiconductors
0 - 0.5 -1 - 1.5 IF = 0.5 mA -2 - 2.5 -3 0
21027
|S21| - Insertion Loss (dB)
IF = 3mA IF = 1 mA
IF = 10 mA IF = 100 mA
0.5
1
1.5
2
2.5
3
3.5
f - Frequency (GHz)
Figure 5. Insertion Loss of One Diode Inserted in Series with 50 Strip Line
0
|S21| = |S12 | - Isolation (dB)
-5
- 10
- 15
VR = 0, diode zero-biased
- 20
- 25 0
21028
0.5
1
1.5
2
2.5
3
3.5
f - Frequency ( GHz )
Figure 6. Isolation of One Diode Inserted in Series with 50 Strip Line
IP2 - Second Order Intercept Point (dBm)
150
100
f = 1.8 GHz f = 0.9 GHz
50
0 0.1 1 10
21029
IF - Forward Current (mA)
Figure 7. Second Order Intercept Point for One Diode Inserted in 50 Strip Line
Document Number 81836 Rev. 1.1, 25-Feb-08
For technical support, please contact: Diodes-SSP@vishay.com
www.vishay.com 3
BAR64V-05W-V
Vishay Semiconductors Package Dimensions in mm (inches): SOT323-V
1.0 [0.039] 0.8 [0.031] 0.8 [0.031] 1.1 [0.043] 2.2 [0.087] 2.0 [0.079]
0.0 [0.000]
0.1 [0.004]
0.15 [0.006]
0.08 [0.003]
8
0.46 [0.018] 0.26 [0.010] 0.4 [0.016] 0.2 [0.008] 0.525 [0.021] ref. 2.45 [0.096] 2.15 [0.085] 1.35 [0.053] 0.65 [0.026] typ. 1.4 [0.055] 1.2 [0.047] foot print recommendation: 0.6 [0.024] 1.15 [0.045] 0.8 [0.031]
Created - Date: 21 February 2008 Document no.: 6.541-5040.02-4
21113
0.65 [0.026] 1.3 [0.051]
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For technical support, please contact: Diodes-SSP@vishay.com
Document Number 81836 Rev. 1.1, 25-Feb-08
1.8 [0.071]
0
BAR64V-05W-V
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81836 Rev. 1.1, 25-Feb-08
For technical support, please contact: Diodes-SSP@vishay.com
www.vishay.com 5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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